Semiconductor device and a method of manufacturing the same and designing the same

ABSTRACT

A semiconductor device includes grooves defining an active region, including a MISFET, and dummy regions. A first interlayer insulation film is formed over the MISFET, the active region and the dummy regions. A first wiring, and first and second dummy wirings are formed over the first interlayer insulation film. A second interlayer insulation film is formed over the first wiring and the dummy wirings. The second dummy wirings are arranged between the first wiring and the first dummy wirings, and the pitch of the first dummy wirings is larger than that of the second dummy wirings. In planar view, the first and second dummy wirings are arranged over the dummy regions, and the size of each of the first dummy wirings is larger than size of each of the second dummy wirings. The first wiring and the first and second dummy wirings are formed of copper as a major component.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.14/100,429, filed Dec. 9, 2013, which, in turn, is a continuation ofU.S. application Ser. No. 13/858,274, filed Apr. 8, 2013, now U.S. Pat.No. 8,604,505 which, in turn, is a continuation application of U.S.application Ser. No. 13/362,385, filed Jan. 31, 2012, now U.S. Pat. No.8,426,969, which, in turn, is a continuation of U.S. application Ser.No. 13/096,246, filed Apr. 28, 2011, now, U.S. Pat. No. 8,119,495,which, in turn, is a continuation of U.S. Ser. No. 12/714,596, filedMar. 1, 2010, now U.S. Pat. No. 7,948,086, which, in turn, is acontinuation of U.S. application Ser. No. 11/978,686, filed Oct. 30,2007, now U.S. Pat. No. 7,687,914, which, in turn, is a continuation ofU.S. application Ser. No. 11/430,983, filed May 10, 2006, now U.S. Pat.No. 7,411,302, which, in turn, is a continuation of U.S. applicationSer. No. 10/748,139, filed Dec. 31, 2003, and now U.S. Pat. No.7,071,560, and which, in turn, is a divisional of U.S. application Ser.No. 09/985,309, filed Nov. 2, 2001, and now U.S. Pat. No. 6,693,315; andthe entire disclosures of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device and to a methodof manufacturing the same; and, more particularly, the invention relatesto a technique that can effectively be applied to the manufacture of asemiconductor device, including a flattening process utilizing a CMP(Chemical Mechanical Polishing) method.

Trench isolation is one of the isolation methods employed forelectrically isolating adjacent semiconductor elements. In a typicaltrench isolation fabrication process, grooves are provided on asemiconductor substrate, which grooves become an element isolationregion, and these grooves are filled with insulation films.

Trench isolation is formed, for example, using the following method.First, grooves are formed to a depth, for example, of about 0.4 μm inthe element isolation region of the semiconductor substrate using a dryetching method; and, thereafter, a first insulation film is formed to athickness, for example, of about 20 nm at the surface where thesemiconductor substrate is exposed by carrying out a thermal oxidationprocess on the semiconductor substrate. Thereafter, a second insulationfilm is deposited on the semiconductor substrate to fill the inside ofthe grooves; and, then, the trench isolation is formed by removing theportion of the second insulation film at the outside side of the groovesand leaving the portion of the second insulation film only inside of thegrooves, through polishing of the surface of this second insulationfilm, for example, using the CMP method.

When the width of the element isolation region becomes relatively large,the polishing rate of the second insulation film becomes high in thelocal area during the CMP process, and, thereby, a so-called dishingphenomenon is easily generated, whereby a “recess” is produced at thecentral area of the grooves. However, several methods have been proposedto improve the flatness at the surface of the second insulation film inthe element isolation region by controlling the dishing phenomenon. Amethod of providing a dummy pattern is one of such methods.

For example, the Japanese Patent Application Laid-Open No. Hei10(1998)-92921, corresponding to the U.S. Pat. No. 5,885,856, disclosesa method in which each dummy structure is placed in a non-active devicearea to cause the occupation density in the non-active device area to beequal to that of the active device area, and, thereby, the polishingrate is equalized for the entire part of the semiconductor substratesurface.

Moreover, the inventors of the present invention have considered amethod of placing the dummy patterns in a regular manner. The techniqueexplained below has been considered by the inventors of the presentinvention and its outline is as follows.

FIG. 28 shows a first dummy pattern placing method which the inventorsof the present invention have considered.

A plurality of dummy patterns DPA₁ are regularly placed in a dummyregion (region outside of the frame indicated by the broken line in thefigure) FA, where semiconductor elements are not formed, outside of theelement forming region (region within the frame of broken line in thefigure) DA, where the semiconductor elements are formed. A plurality ofdummy patterns DPA₁ are formed to be equal in shape and size, and thesedummy patterns are extensively placed with the same interval in thedummy region FA.

The element forming region DA and dummy region FA, outside of the activeregion AC, form element isolation region IS, and a trench isolation isusually formed in the entire part of this isolation region IS.Therefore, this method for regularly placing the dummy patterns has theinherent problem that the dishing phenomenon is easily generated duringthe CMP process, particularly in the dummy region FA, which is isolatedfrom the active region AC. However, it is now possible to prevent suchdishing phenomenon in the dummy region FA by placing a plurality ofdummy patterns DP₁ therein, whereby the flatness at the surface of theembedding insulation film in the dummy region FA can be improved.

FIG. 29 shows a second dummy pattern placing method which the inventorsof the present invention have discussed. Like the method illustrated inFIG. 28, a plurality of dummy patterns DPA₂ are regularly placed in thedummy region FA, where the semiconductor elements are not formed,outside of the element forming region DA, where the semiconductorelements are formed, and, thereby, the dishing in the dummy region FAcan be prevented. The size of the dummy patterns DPA₂ is smaller thanthe size of the dummy patterns DPA₁ and the dummy patterns DPA₂ can beplaced up to the dummy region FA near the boundary BL (indicated by theframe line in the figure) between the element forming region DA anddummy region FA.

SUMMARY OF THE INVENTION

However, according to an investigation by the inventors of the presentinvention, there has been a further problem in that, when the dummystructures are placed in the non-active device area, some dummystructures are complicated in shape and the insulation film is notperfectly embedded within the internal side of the dummy structureswhich are particularly defined. Moreover, it has also been formed thatthe time required for the manufacturing process is extended because itis necessary to additionally provide a process for removing the dummystructures that are too small to be formed.

In addition, the inventors of the present invention have also found thatthe following problem exists in the first dummy pattern placing methodand the second dummy pattern placing method.

In the first dummy pattern placing method, since the size of the dummypatterns DPA₁ is relatively large, a region where the dummy patternsDPA₁ cannot be placed is generated in the dummy region FA near theboundary BL between the element forming region DA and dummy region FA;and, if this region is extended relatively, it is apparent that thedishing phenomenon is generated.

In the second dummy pattern placing method, since the size of the dummypatterns DPA₂ is relatively small, the dummy patterns DPA₂ may be placedup to the area near the boundary BL between the element forming regionDA and dummy region FA. Thereby, since the dummy patterns DPA₂ may beplaced also in the region where the dummy patterns DPA₁ cannot beplaced, the second dummy pattern placing method can further improve theflatness of the surface of the embedded insulation film up to the dummyregion FA near the boundary BL in comparison with the first dummypattern placing method.

However, when the second dummy pattern placing method is introduced, thenumber of dummy patterns DPA₂ placed in the dummy region FA increases,and, thereby, the coordinate data required for generating a maskremarkably increases. As a result, there arises a problem in that thearithmetic processing time in computer used for generating a maskpattern increases, and, moreover, the time required for drawing thepatterns on the mask substrate also increases, with the result that thethroughput in the formation of a mask is remarkably deteriorated.Particularly, when the second dummy pattern placing method is employedfor ASIC (Application Specific Integrated Circuit: integrated circuitfor particular application), the time required to generate the mask isextended, with the result that a problem remains for development of ASICwithin a short period of time.

It is therefore an object of the present invention to provide atechnique to improve the flatness of the surface of members embedded ina plurality of recesses.

It is another object of the present invention to provide a technique toimprove the flatness of the surface of members embedded in a pluralityof recesses without extension of the time required for manufacturing thesemiconductor device.

The objects explained above, other objects and novel features of thepresent invention will become more apparent from the followingdescription of the present invention and the accompanying drawings.

The typical aspects of the invention disclosed in the presentapplication will be briefly explained below.

-   (1) In the semiconductor device of the present invention, there are    provided an element forming region where circuit elements are    specified with the boundary and a dummy region where circuit    elements adjacent to the boundary are not formed. The dummy region    has at least two dummy pattern groups, each dummy pattern group    allocates a plurality of dummy patterns in the same occupation shape    on the plane and in the same size with isolation like a matrix,    while maintaining also an equal interval between the patterns, and    the sizes of a plurality of dummy patterns in the row direction    and/or column direction are different among the dummy pattern    groups.-   (2) A method of manufacturing a semiconductor device of the present    invention relates to a semiconductor device in which an element    forming region where circuit elements are formed and a dummy region    where circuit elements are not formed are specified with a boundary,    and at least two dummy pattern groups are formed in the dummy    region. The method comprises a process to form a first isolation    groove for specifying an active region of the element forming region    on the main surface of a semiconductor substrate and a second    isolation groove for dividing, in a matrix shape, a plurality of    dummy patterns forming a dummy pattern group in the dummy region; a    process to deposit an insulation film covering the element forming    region and dummy region so as to embed the first isolation groove    and second isolation groove; and a process to remove the insulation    film at the outside of the first isolation groove and second    isolation groove by polishing the surface of insulation film,    whereby a plurality of dummy patterns having the same occupation    shape on the plane and the same size are formed in each dummy    pattern group, but the sizes of dummy patterns in the row direction    and/or column direction are different among the dummy pattern    groups.-   (3) A method of designing a semiconductor device of the present    invention relates to a semiconductor device having an element    forming region, where circuit elements are specified with a    boundary, and a dummy region, where circuit elements are provided    adjacent to the boundary. The dummy region has at least two dummy    pattern groups, and a plurality of dummy patterns having the same    occupation shape on the plane and the same size are disposed in a    spaced arrangement like a matrix shape in each dummy pattern group    and the sizes of a plurality of dummy patterns in the row direction    and/or column direction are different among the dummy pattern    groups. The method comprises a process to allocate, after specifying    the element forming region and dummy region using the boundary, a    plurality of dummy patterns for each dummy pattern group to generate    a mesh of a size adding a size of one side of the dummy pattern    forming the dummy pattern group and a size of the space among the    adjacent dummy patterns for each dummy pattern group and allocate    the dummy patterns within the mesh in the region where placement of    dummy patterns is prohibited.

According to the features explained above, a plurality of dummy patternscan be placed up to the area near the boundary between the elementforming region and dummy region. Thereby, the flatness of the surface ofthe insulation film embedded in the isolation grooves can be improvedover the entire area of the dummy region.

Moreover, since a relatively wide region in the dummy region can beoccupied by a plurality of dummy patterns of relatively wider area,while the remaining relatively narrow region can be occupied with aplurality of dummy patterns of relatively narrow area, an increase inthe number of dummy patterns can be controlled. Therefore, an increasein the amount of coordinate data which needs to be produced at the timeof generating a mask can also be controlled with a view towardcontrolling an increase in the arithmetic processing time of a computerused for such processing and the time for drawing a pattern on the masksubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a portion of a logic integrated circuit devicerepresenting an embodiment 1 of the present invention.

FIG. 2 is a cross-sectional view along the line A-A of FIG. 1.

FIGS. 3(a) and 3(b) are diagrammatic plan views illustrating examples ofa pitch and a size of dummy patterns.

FIG. 4 is a diagrammatic plan view illustrating an example of theplacement of the dummy patterns.

FIG. 5 is a process flow diagram showing an example of a patternmanufacturing method.

FIG. 6 is a cross-sectional view of a portion of a semiconductorsubstrate in a step of the process sequence of a method of manufacturinga logic integrated circuit device as an embodiment 1 of the presentinvention.

FIG. 7 is a cross-sectional view of a portion of a semiconductorsubstrate in a following step in the process sequence of a method ofmanufacturing a logic integrated circuit device as an embodiment 1 ofthe present invention.

FIG. 8 is a cross-sectional view of a portion of a semiconductorsubstrate in a following step in the process sequence of a method ofmanufacturing a logic integrated circuit device as an embodiment 1 ofthe present invention.

FIG. 9 is a cross-sectional view of a portion of a semiconductorsubstrate in a following step in the process sequence of a methodmanufacturing a logic integrated circuit device as an embodiment 1 ofthe present invention.

FIG. 10 is a cross-sectional view of a portion of a semiconductorsubstrate in a following step in the process sequence of a method ofmanufacturing a logic integrated circuit device as an embodiment 1 ofthe present invention.

FIG. 11 is a cross-sectional view of a portion of a semiconductorsubstrate in a following step in the process sequence of a method ofmanufacturing a logic integrated circuit device as an embodiment 1 ofthe present invention.

FIG. 12 is a cross-sectional view of a portion of a semiconductorsubstrate in a following step in the process sequence of a method ofmanufacturing a logic integrated circuit device as an embodiment 1 ofthe present invention.

FIG. 13 is a cross-sectional view of a portion of a semiconductorsubstrate in a following step in the process sequence of a method ofmanufacturing a logic integrated circuit device as an embodiment 1 ofthe present invention.

FIG. 14 is a cross-sectional view of a portion of a semiconductorsubstrate in a following step in the process sequence of a method ofmanufacturing a logic integrated circuit device as an embodiment 1 ofthe present invention.

FIG. 15 is a cross-sectional view of a portion of a semiconductorsubstrate in a following step in the process sequence of a method ofmanufacturing a logic integrated circuit device as an embodiment 1 ofthe present invention.

FIG. 16 is a cross-sectional view of a portion of a semiconductorsubstrate in a following step in the process sequence of a method ofmanufacturing a logic integrated circuit device as an embodiment 1 ofthe present invention.

FIG. 17 is a cross-sectional view of a portion of a semiconductorsubstrate in a step in the process sequence of a method of manufacturinga logic integrated circuit device as an embodiment 2 of the presentinvention.

FIG. 18 is a cross-sectional view of a portion of a semiconductorsubstrate in a step in the process sequence of a method of manufacturinga logic integrated circuit device as an embodiment 2 of the presentinvention.

FIG. 19 is a cross-sectional view of a portion of a semiconductorsubstrate in a step in the process sequence of a method of manufacturinga logic integrated circuit device as an embodiment 3 of the presentinvention.

FIG. 20 is a cross-sectional view of a portion of a semiconductorsubstrate in a step in the process sequence of a method of manufacturinga logic integrated circuit device as an embodiment 3 of the presentinvention.

FIG. 21 is a cross-sectional view of a portion of a semiconductorsubstrate in a step in the process sequence of a method of manufacturinga logic integrated circuit device as an embodiment 3 of the presentinvention.

FIG. 22 is a cross-sectional view of a portion of a semiconductorsubstrate in a step in the process sequence of a method of manufacturinga logic integrated circuit device as an embodiment 3 of the presentinvention.

FIG. 23 is a plan view of a portion of another logic integrated circuitdevice representing an embodiment 4 of the present invention.

FIGS. 24(a) and 24(b) are diagrammatic plan views illustrating examplesof a pitch and a size of dummy patterns.

FIG. 25 is a plan view of a portion of dummy patterns of wiringrepresenting an embodiment 5 of the present invention.

FIGS. 26(a) and 26(b) are diagrammatic plan views illustrating examplesof a pitch and a size of dummy patterns of wiring.

FIG. 27 is a cross-sectional view of a portion of a logic integratedcircuit device using dummy patterns for the wiring according to anembodiment 5 of the present invention.

FIG. 28 is a plan view showing a first dummy pattern placement methoddiscussed by the inventors of the present invention.

FIG. 29 is a plan view showing a second dummy pattern placement methoddiscussed by the inventors of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The preferred embodiments of the present invention will be explained indetail with reference to the accompanying drawings. In the followingexplanation of the preferred embodiments, like elements are designatedwith like reference numerals throughout the accompanying drawings, andan explanation thereof is not repeated.

In regard to the term “shape” as used in the description of the presentinvention, the expression of shape, such as “square shape” and“rectangular shape”, includes the shape according to a design concept,the shape of a mask pattern according to the data, the shape on the maskand the shape of a real pattern on the patterned integrated circuitdevice, and this term also substantially includes a shape where cornersare a little deformed from the true geographical shape, due to problemsin a given process, such as lithography.

Embodiment 1

An example of the placement of dummy patterns according to embodiment 1of the present invention will be explained with reference to FIG. 1 toFIG. 5. FIG. 1 is a plan view of an example of a logic integratedcircuit device. FIG. 2 is a cross-sectional view taken along the lineA-A of FIG. 1. FIGS. 3(a) and 3(b) are plan views showing a pitch and asize of the dummy patterns. FIG. 4 is a plan view showing an example ofthe placement of the dummy patterns. FIG. 5 is a process flow diagramshowing an example of a method of generating the dummy patterns.

As shown in FIG. 1, the area inside of the boundary BL, which isindicated by a broken line, represents the element forming region DAwhere semiconductor elements are formed, while the area outside of theboundary BL represents the dummy region FA where semiconductor elementsare not formed.

The boundary BL between the element forming region DA and dummy regionFA is determined from a layout of the conductive film existing on theelement isolation region IS and a layout of the active regions AC. Sincea problem, such as increase in the capacitance load, is generated when adummy pattern is formed beneath the conductive film, it is necessary todetermine the location of the boundary BL in such a way as to ensurethat the conductive film and the dummy patterns do not overlap. In theembodiment 1 of the present invention, the boundary BL is determined, inconsideration of the allowable size required for reduction of such acapacitance load and the aligning accuracy available in the lithographyprocess, on the basis of the layout of the conductive film and thelayout of the active regions AC extending on the element isolationregion IS.

As shown in FIG. 1 and FIG. 2, the CMOSFETs (Complementary Metal OxideSemiconductor Field Effect Transistors) C₁, C₂, C₃ are formed in theelement forming region DA. An active region AC is specified with respectto the element isolation region IS where the silicon oxide film 3 isembedded in the isolation grooves 2 a formed on the main surface of thesemiconductor substrate 1.

On the main surface of semiconductor substrate 1, a p-type well 4 and ann-type well 5 are formed, and an n-channel MISFET (Metal InsulatorSemiconductor FET) is formed in the p-type well 4, while a p-channelMISFET is formed in the n-type well 5. On the main surface of thesemiconductor substrate 1, a gate electrode 7 is formed via a gateinsulation film 6 of the n-channel MISFET and p-channel MISFET. The gateinsulation film 6 may be formed of a silicon oxide film, for example,using the thermal oxidation method, and the gate electrode 7 may beformed of a polycrystalline silicon film, for example, using the CVD(Chemical Vapor Deposition) method. At the surface of thepolycrystalline silicon film, a silicide layer for reduction of electricresistance may be formed. Moreover, the gate electrode 7 is formed toextend on the element isolation region IS from the active region AC.

A side wall spacer 8 is formed at the side walls of the gate electrode 7of the n-channel MISFET and p-channel MISFET. This side wall spacer 8may be formed, for example, of a silicon oxide film or a silicon nitridefilm. Moreover, the source and drain expanding regions 9 a are formed tosandwich a channel region in the p-type wells 4 on both sides of thegate electrode 7 of the n-channel MISFET; and, moreover, the source anddrain expanding regions 9 b are formed at the external side of thesource and drain expanding regions 9 a. In the same manner, although notshown particularly, the source and drain expanding regions are formed tosandwich the channel region in the n-type wells 5 on both sides of thegate electrode 7 of the p-channel MISFET; and, moreover, the source anddrain diffusing regions are formed at the outside of the source anddrain expanding regions. The source and drain of the n-channel MISFETand p-channel MISFET are formed to have a so-called LDD (Lightly DopedDrain) structure.

The CMOSFETs C₁, C₂, C₃ formed in the element forming region DA arecovered with an interlayer insulation film 10, which is provided withthe p-type well and n-type well of the active region AC and a contacthole 11 reaching the gate electrode. The interlayer insulation film 10is formed, for example, of a silicon oxide film, and the surface thereofis preferably flattened using the etch back method or CMP method. On theinterlayer insulation film 10, wirings are formed, but these wirings arenot shown.

In the dummy region FA, a plurality of the first dummy patterns DP1 ofrelatively large area (indicated as the stippled areas in FIG. 1) and aplurality of the second dummy patterns DP2 of relatively narrow area(indicated as the hatched areas in FIG. 1) are regularly placed. Asshown in FIG. 3(a), the first dummy pattern DP₁ has a side size of La inboth row and column directions and is structured as a squaresemiconductor island corresponding to the active region AC, occupying arelatively wide region in the dummy region FA. On the other hand, thesecond dummy pattern DP₂ has a side size of Lb in both row and columndirections and is structured as a square semiconductor islandcorresponding to the active region AC and is placed in a relativelynarrow region in the dummy region FA.

Here, the size La of one side of the first dummy pattern DP₁ is set tobe larger than the size Lb of one side of the second dummy pattern DP₂,but the size of the space between adjacent first dummy patterns DP₁ andthe size of the space between adjacent second dummy patterns DP₂ are setto be equal to the size of the space Sa, and the first dummy patternsDP₁ and the second dummy patterns DP₂ are respectively isolated with anidentical spacing.

Moreover, as shown in FIG. 4, the pattern size, which is equal to thesize La of a side of the first dummy pattern DP₁+the space size Sa, isequal in both row and column directions to an integer times the patternsize which is equal to the size Lb of a side of the second dummy patternDP₂+the space size Sa, satisfying the relationship of La+Sa=N×(Lb+Sa) (Nis an integer 1 or larger, N≧1). Thereby, since the first dummy patternDP₁ and second dummy pattern DP₂, which have different sizes, can beregularly placed in a plural number in the dummy region FA, an increasein the arithmetic processing time of a computer can be controlled evenwhen the coordinate data for generating a mask increases.

Moreover, the sizes La of the first dummy pattern DP₁, Lb of the seconddummy patterns DP₂ and the space size Sa are set to the minimumallowable size (minimum size allowable for pattern design) or more. Ifthese sizes become smaller than the minimum allowable size, variousproblems, such as peeling of the resist pattern, manufacturing failureof isolation grooves in the dry-etching process or embedding failure ofthe silicon oxide film into the isolation grooves are generated at thetime of forming the element isolation region IS. For example, the sizeLa of a side of the first dummy pattern DP1 is set to 2.0 μm, while thesize Lb of a side of the second dummy pattern DP₂ is set to 0.8 μm andthe space size Sa is set to 0.4 μm.

Next, the dummy pattern placement method will be explained withreference to FIG. 5. The placement data for the dummy pattern isgenerated using an automatic program installed in a computer. Next, adummy pattern is drawn on the mask substrate on the basis of thisplacement data, and the dummy pattern is then transferred to asemiconductor substrate via the mask. Here, the method of generating theplacement data of the first dummy pattern DP₁ and second dummy patternDP₂ using the automatic program will be explained.

First, the placement prohibiting region of the first and second dummypatterns DP₁ and DP₂ (element forming region DA) is obtained (process100 of FIG. 5). As explained above, the placement prohibiting region isdetermined, in consideration of the allowable size required forreduction of capacitance load and aligning accuracy in the lithographytechnique, based on the layout of the conductive film extending on theelement isolation region IS and the layout of the active region AC.Namely, the specified size data is respectively added to the coordinatedata of the conductive film extending on the element isolation region ISand the coordinate data of the active region AC, and the coordinate dataof the placement prohibiting region can be obtained by obtaining the ORlogic of all data obtained. For example, the region isolated by 2 μmfrom the active region AC, where the CMOSFETs C₁, C₂, C₃ are formed, isdesignated as the first placement prohibiting region, the regionisolated by 1 μm from the gate electrodes of the CMOSFETs C₁, C₂, C₃ isdesignated as the second placement prohibiting region and the OR regionbetween the first and second placement prohibiting regions is designatedas the placement prohibiting region of the first and second dummypatterns DP₁ and DP₂.

Next, the first dummy patterns DP₁ of relatively large area are placedin the greater part of the dummy region FA (process 101 of FIG. 5). Forexample, after a mesh is formed in the first pitch on the entire surfaceof the semiconductor substrate 1, the mesh of the placement prohibitingregion of the first and second dummy patterns DP₁ and DP₂ is removed.Otherwise, after the mesh is formed in the first pitch on the entiresurface of the semiconductor substrate 1, the mesh of the placementprohibiting region of the first and second dummy patterns DP₁ and DP₂ isremoved, and, moreover, the mesh of the minimum allowable size or lessis removed. Thereafter, the first dummy pattern DP₁ is placed in themesh. Here, the first pitch is a pattern size (La+Sa) which is equal tothe size La of a side of the first dummy pattern DP₁+the space size Sa.

Next, the placement prohibiting region of the second dummy pattern DP₂of relatively smaller area is obtained (process 102 of FIG. 5). Theplacement prohibiting region of the second dummy pattern DP₂ isdesignated by adding the region where the first dummy patterns DP₁ areplaced extensively in the process 101 to the placement prohibitingregion of the second dummy pattern DP₂.

Next, the second dummy patterns DP2 of relatively smaller area areplaced in the dummy region FA (process 103 of FIG. 5). For example,after the mesh is generated in the second pitch on the entire surface ofthe semiconductor substrate 1, the mesh of the placement prohibitingregion of the second dummy pattern DP₂ is removed. Or, after the mesh isgenerated in the second pitch over the entire surface of thesemiconductor substrate 1, the mesh in the placement prohibiting regionof the second dummy pattern DP₂ is removed, and, moreover, the mesh ofthe minimum allowable size or less is removed. Thereafter, the seconddummy pattern DP₂ is placed in the mesh. Here, the second pitch is apattern size (Lb+Sa) which is equal to the size Lb of a side of thesecond dummy pattern DP₂+the space size Sa, and, moreover, the secondpitch of the second dummy pattern DP₂ is equal to 1/integer (N) of thefirst pitch of the first dummy pattern DP₁, namely equal to ½. Also,from the point of view of easier placement of the second dummy patternDP₂, it is preferable to set the second pitch of the second dummypattern DP₂ to 1/(an integer of the first pitch of the first dummypattern DP₁).

In this embodiment 1, a plurality of first dummy patterns DP₁ are placedin the dummy region FA, which is isolated from the element formingregion DA, and a plurality of dummy patterns DP₂ are placed in the dummyregion FA near the element forming region DA, but the present inventionis, of course, not limited to this embodiment 1. For example, aplurality of first dummy patterns DP₁ may be placed in the dummy regionFA near the element forming region DA and a plurality of second dummypatterns DP₂ may be placed in the dummy region FA far from the elementforming region DA. Otherwise, a plurality of dummy patterns DP₁ may beplaced almost over the entire surface of the dummy region FA and aplurality of second dummy patterns DP₂ may also be placed among theadjacent first dummy patterns DP₁ where the second pitch is generated.

Moreover, in the embodiment 1, examples of the CMOSFETs C₁, C₂, C₃ areshown as semiconductor elements formed in the element forming region DA,but these semiconductor elements may be replaced by other semiconductorelements, for example, a Bi-CMOS transistor.

As explained above, according to the embodiment 1, since the first dummypatterns DP₁ and second dummy patterns DP₂ can be placed in the regionup to the boundary BL between the element forming region DA and dummyregion FA, the flatness of the surface of the silicon oxide film 3embedded within the isolation grooves 2, 2 a can be improved over theentire region of the dummy region FA.

Moreover, the number of second dummy patterns DP₂ of relatively smallerarea can be reduced by occupying a relatively wider region of the dummyregion FA with the first dummy patterns DP₁ of relatively wider area,and, thereby, increase of the data amount of the mask can also becontrolled. Moreover, the first dummy pattern DP₁ and second dummypattern DP₂ can be expressed with the least data of the origincoordinate and XY coordinate by setting the shape of the first dummypattern DP₁ and second dummy pattern DP₂. Accordingly, an increase ofthe coordinate amount for generating a mask can be controlled, and,thereby, an increase of the arithmetic processing time of the computerand time for drawing a pattern on the mask substrate can also becontrolled.

Next, an example of the method of manufacturing a logic integratedcircuit device of the embodiment 1 will be explained, following theprocess sequence with reference to FIG. 6 to FIG. 16.

First, as shown in FIG. 6, a semiconductor substrate 1, for example,consisting of a p-type single crystal silicon, is prepared. Next, thissemiconductor substrate 1 is thermally oxidized, and a thin siliconoxide film 12 is formed on the surface thereof to a thickness as thin asabout 10 nm. Thereafter, a silicon nitride film 13 is deposited to athickness of about 120 to 200 nm using the CVD method on the upperlayer, and the silicon nitride film 13, silicon oxide film 12 andsemiconductor substrate 1 are sequentially dry-etched using a resistpattern as a mask in order to form the isolation grooves 2, 2 a to adepth of about 0.3 to 0.4 μm on the semiconductor substrate 1. In thedummy region FA, the first dummy pattern DP₁ and second dummy patternDP₂ are provided to avoid the possibility that the entire region becomesan isolation groove.

Next, with a view toward cleaning the interface condition of theinternal wall of the isolation grooves 2, 2 a, the semiconductorsubstrate 1 is subjected to a thermal oxidation process to form,although not shown, a silicon oxide film as thin as about 10 to 30 nm onthe exposed surface of the semiconductor substrate 1. Subsequently, asshown in FIG. 7, a silicon oxide film 3 is deposited using the CVDmethod or plasma CVD method on the semiconductor substrate 1. The filmthickness of this silicon oxide film 3 is, for example, about 600 to 700nm, and this silicon oxide film 3 is formed to have a profile such thatthe surface of the silicon oxide film 3, embedded in the relativelylarge isolation groove 2 a so as to be easily formed at the boundary BLor in the element forming region DA, becomes higher than the surface ofthe silicon nitride film 13

Next, a mask in the form of an inverted mask of the isolation groove 2is prepared. On this mask, only the pattern of the relative largeisolation grooves 2 a, which is to be easily formed in the boundary BLor element forming region DA in the inverted pattern, is depicted, andthe pattern smaller than the particular size, for example, of 0.6 μm isremoved. Using this mask, a resist pattern 14 is formed on the siliconoxide film 3, and the silicon oxide film 3 is removed by an etchingprocess in the amount of about ½ (for example, about 300 nm) of the filmthickness using the resist pattern 14 as a mask, as shown in FIG. 8.Thereby, in the subsequent CMP process, the flatness of the surface ofthe silicon oxide film 3 embedded in the relatively large isolationgrooves 2 a to be formed easily at the boundary BL or element formingregion DA can be improved. Here, a horn-shaped projection is formed fromwhat remains of the silicon oxide film 3 under the resist pattern 14,but this projection is polished in the subsequent CMP process.

Next, after the resist pattern 14 is removed, as shown in FIG. 9, thesilicon oxide film 3 is polished using the CMP method, as shown in FIG.10, leaving the silicon oxide film 3 within the isolation grooves 2, 2a. In this case, the silicon oxide film 12 functions as a stopper layerfor the polishing to protect this film from the scraping by utilizingthe polishing rates of the silicon nitride film 13 and silicon oxidefilm 3. Scraping of the silicon nitride film 13 is controlled, forexample, to about 60 nm. Thereafter, the silicon oxide film 3 embeddedin the isolation grooves 2 is densified (tightened using a burningprocess) by conducting heat treatment at a temperature of about 1000 EC.Next, as shown in FIG. 11, the silicon nitride film 13 is removed usinga wet etching process with hot phosphoric acid, and thereafter thesilicon oxide film 12, as the underlayer, is then removed.

Next, as shown in FIG. 12, a p-type impurity, for example, boron (B), ision-injected to form the p-type well 4 in the n-channel MISFET formingregion of the semiconductor substrate 1, and an n-type impurity, forexample, phosphorus (P), is ion-injected to form the n-type well 5 inthe p-channel MISFET forming region. In addition, although not shown inthe figure, an impurity is ion-injected to the channel region.Thereafter, the semiconductor substrate 1 is thermally oxidized to forma gate insulation film 6 on the surface of semiconductor substrate 1 toa thickness, for example, of about 2 nm.

Next, as shown in FIG. 13, a polycrystalline silicon film is depositedon the semiconductor substrate 1 using the CVD method, and, thereafter,the polycrystalline silicon film is etched using a resist pattern as amask to form the gate electrodes 7 of the n-channel MISFET and p-channelMISFET. Subsequently, the semiconductor substrate 1 is subjected to adry oxidation process at about 800 C.

Next, after the n-type well 5 is covered with a resist film, an n-typeimpurity, for example, arsenic (As), is ion-injected to the p-type well4 using the gate electrode 7 of the n-channel MISFET as a mask to formthe source and drain expanding regions 9 a of the n-channel MISFET.Similarly, after the p-type well 4 is covered with a resist film, ap-type impurity, for example, boron fluoride (BF₂), is ion-injected tothe n-type well 5 using the gate electrode 7 of the p-channel MISFET asa mask to form the source and drain expanding regions 15 a of thep-channel MISFET.

Next, as shown in FIG. 14, after an insulation film, for example, asilicon oxide film or silicon nitride film, is deposited on thesemiconductor substrate 1, this insulation film is anisotropicallyetched using RIE (Reactive Ion Etching) and a side wall spacer 8consisting of an insulation film is formed to the respective side wallsof the gate electrodes 7 of the n-channel MISFET and p-channel MISFET.

Next, after the n-type well 5 is covered with a resist film, an n-typeimpurity, for example, arsenic, is ion-injected to the p-type well 4using the gate electrode 7 of the n-channel MISFET and the side wallspacer 8 as a mask in order to form the source and drain expandingregions 9 b of the n-channel MISFET. In the same manner, after thep-type well 4 is covered with a resist film, a p-type impurity, forexample, boron fluoride, is ion-injected to the n-type well 5 using thegate electrode 7 of p-channel MISFET as a mask in order to form thesource and drain expanding region 15 b of the p-channel MISFET.

Subsequently, as shown in FIG. 15, an interlayer insulation film 10,structured, for example, of a silicon oxide film, is formed on thesemiconductor substrate 1. Thereafter, the surface of this interlayerinsulation film 10 is flattened using the etch back method or CMPmethod. Then, the interlayer insulation film 10 is etched using a resistpattern as a mask to form a contact hole 11 reaching the source anddrain expanding regions 9 b of the n-channel MISFET and the source anddrain expanding regions 15 b of the p-channel MISFET. Although not shownin the figure, contact holes reaching the gate electrodes 7 of then-channel MISFET and p-channel MISFET are also formed simultaneously.

Next, as shown in FIG. 16, a metal film, for example, a tungsten (W)film, is deposited on an upper layer of the interlayer insulation film10, and a plug 16 is formed by embedding a metal film at the internalside of the contact hole 11 by flattening the surface of above metalfilm, for example, using the CMP method. Thereafter, the first layerwiring 17 is formed by etching the metal film deposited on the upperlayer of the interlayer insulation film 10.

Thereafter, a wiring is formed as the upper layer of the first layerwiring 17, and, moreover, a surface protection film is formed tocomplete the logic integrated circuit device.

Embodiment 2

The embodiment 2 of the present invention is directed to anothermanufacturing method that can be used to form the structure of FIG. 1.

FIG. 17 and FIG. 18, which illustrate the embodiment 2, arecross-sectional views of a portion of a semiconductor substrate aftercompletion of the manufacturing processes explained with reference toFIGS. 6 and 7.

In this embodiment, the isolation grooves 2, 2 a are formed first to adepth of about 0.3 to 0.4 μm on the semiconductor substrate 1, and thenthe silicon oxide film 3 is deposited on the semiconductor substrate 1using the CVD method or plasma CVD method.

Next, as shown in FIG. 17, a coated insulation film 18, for example, anSOG (Spin On Glass) film, is formed as the upper layer of the siliconoxide film 3. This coated insulation film 18 can be flattened at itssurface even when a fine level-difference exists due to the fluidity ofthe film. Therefore, even if a recess is generated at the surface of thesilicon oxide film 3, the surface of the coated insulation film 18 willbe flat. Subsequently, the semiconductor substrate 1 is subjected toheat treatment to remove the solvent in the coated insulation film 18and to form a dense substrate. This heat treatment temperature isranged, in the case of annealing in a furnace, for example, from about400 to 500° C. or ranged, in the case of RTA (Rapid Thermal Annealing),for example, from about 700 to 800° C.

Next, as shown in FIG. 18, the coated insulation film 18 is etched usingthe etch back method. In this case, etching is performed until thecoated insulation film 18 is removed almost completely, under thecondition that the etching rate of the silicon oxide film 3 and theetching rate of the coated insulation film 18 are almost equal, with aview toward flattening the surface of the silicon oxide film 3.Thereafter, as shown in FIG. 10, the silicon oxide film 3 is left withinthe isolation grooves 2, 2 a by polishing the silicon oxide film 3 onthe silicon nitride film 2 using the CMP method.

Subsequently, the processes are identical to that explained withreference to FIG. 11 and subsequent figures relating to the embodiment 1of the present invention.

As explained above, according to the embodiment 2, the surface of thesilicon oxide film 3, that is embedded in the relatively large isolationgroove 2 a, which may easily be formed at the boundary BL or in theelement forming region DA, can be flattened. Moreover, since the mask towhich a resist pattern 14 used for flattening the surface of the siliconoxide film 3 in the embodiment 1 is no longer required, themanufacturing cost can be lowered in comparison with that of theembodiment 1.

Embodiment 3

The embodiment 3 is directed to another manufacturing method that can beused to form the structure of FIG. 1, and this embodiment will beexplained with reference to FIG. 19 to FIG. 22.

First, as shown in FIG. 19, a semiconductor substrate 1, consisting, forexample, of a p-type single crystal silicon, is subjected to the thermaloxidation to form on the surface thereof a gate insulation film 19consisting of a thin silicon oxide film having a thickness of about 2 to3 nm. Next, a first silicon film 20 having a thickness of about 50 nmand a silicon nitride film having a thickness of about 120 to 200 nm aredeposited sequentially as upper layers using the CVD method. Thereafter,the silicon nitride film 21, first silicon film 20 and gate insulationfilm 19 are sequentially dry-etched using a resist pattern as a mask.The first silicon film 20 is composed of a non-crystal silicon orpolycrystalline silicon. Subsequently, after the resist pattern isremoved, the isolation grooves 2, 2 a are formed to a depth of about 0.3to 0.4 μm on the semiconductor substrate 1 by dry-etching thesemiconductor substrate 1 using the silicon nitride film 21 as a mask.In the dummy region FA, the first dummy pattern DP₁ and second dummypattern DP₂ are provided so that the total region does not become anisolation groove.

Next, although not shown in the figure, after a thinner silicon oxidefilm is formed to a thickness of about 10 to 30 nm on the exposedsurface of the semiconductor substrate 1, the silicon oxide film 3 isdeposited to a thickness of about 600 to 700 nm on the semiconductorsubstrate 1 using the CVD method or plasma CVD method, as shown in FIG.20. Thereafter, as shown in FIG. 21, the silicon oxide film 3 is left inthe isolation grooves 2, 2 a in the same manner as explained withreference to FIG. 8 to FIG. 10 in the embodiment 1 explained above.

Next, as shown in FIG. 22, the silicon nitride film 21 is removed usingwet-etching with hot phosphoric acid. In this case, the first siliconfilm 20 is not removed, but is used as a part of the gate electrodes ofthe CMOSFETs C₁, C₂, C₃. Thereafter, a p-type impurity is ion-implantedin order to form the p-type well 4 in the n-channel MISFET formingregion of the semiconductor substrate 1, and an n-type impurity is alsoion-implanted in order to form the n-type well 5 in the p-channel MISFETforming region. Moreover, although not shown in the figure, an impurityis ion-implanted to the channel region. Thereafter, a second siliconfilm 22 is formed on the semiconductor substrate 1 and the gateelectrodes of the CMOSFETs C₁, C₂, C₃, with the laminated layerconsisting of the first silicon film 20 and second silicon film 22.

The subsequent processes are identical to those explained with referenceto FIG. 13 and successive figures relating to the embodiment 1, and,therefore, a repeated explanation thereof is omitted here.

As explained above, according to the embodiment 3, a kink generated inthe drain current-gate voltage characteristic resulting from theroundness at the end portion of the isolation groove due to a fall ofthe silicon oxide film 3 embedded in the element isolation region IS canbe prevented by using the first silicon film to form the elementisolating region IS as a part of the gate electrodes of the CMOSFETs C₁,C₂, C₃.

Embodiment 4

An example of the placement of other dummy patterns, representing anembodiment 4, will be explained with reference to FIG. 23, FIG. 24(a)and FIG. 24(b). FIG. 23 is a plan view of a portion of a logicintegrated circuit device, and FIGS. 24(a) and 24(b)a are illustrating apitch and a size of the dummy pattern.

As shown in FIG. 23, like the embodiment 1, the area inside of theboundary BL, which is indicated in the figure with a broken line, is theelement forming region DA where semiconductor elements are formed, andthe CMOSFETs C₁, C₂, C₃ are formed in this region. Moreover, the areaoutside of the boundary BL is the dummy region FA where thesemiconductor elements are not formed.

In the dummy region FA, rectangular third dummy patterns DP₃, which arelarger than the first and second dummy patterns PD₁, PD₂, are alsoprovided in addition to the first and second dummy patterns. Namely,three kinds of dummy patterns of different shapes and areas (first dummypattern DP₁, second dummy pattern DP₂, third dummy pattern DP₃) areregularly placed in the dummy region FA. The third dummy pattern DP₃ isformed of a rectangular semiconductor island (indicated as stippledareas in FIG. 23) corresponding to the active region AC.

As shown in FIG. 24(a) and FIG. 24(b), the size Laa of the longer sideand the size La of the short side of the third dummy pattern DP₃ are setlarger than the size Lb of a side of the second dummy pattern DP₂, butthe size of the space between adjacent third dummy patterns DP₃ isidentical to the size Sa of the space between adjacent second dummypatterns DP₂.

Moreover, the size of a side of the third dummy pattern DP₃ is equal toan integer times the pattern size obtained by adding the space size Sato the size Lb of a side of the second dummy pattern DP₂ both in the rowand column directions and satisfies the relationships of Laa+Sa=N1(Lb+Sa), La+Sa=N2×(Lb+Sa) (N1, N2 is respectively integer 1 or larger(N1, N2 1)). Thereby, since it is possible to regularly locate aplurality of first dummy patterns DP₁, second dummy patterns DP₂ andthird dummy pattern DP₃ having different sizes in the dummy region FA,if the coordinate data at the time of generating a mask increases, anincrease in the arithmetic processing time of the computer can becontrolled.

Placement data of the first dummy pattern DP₁, second dummy pattern DP₂and third dummy pattern DP₃ is generated in the same manner as themethod of generating the placement data of the first dummy pattern DP₁and second dummy pattern DP₂ explained with reference to the processdiagram of FIG. 5 for the embodiment 1.

First, the placement prohibiting region (element forming region DA) ofthe first dummy pattern DP₁, second dummy pattern DP₂ and third dummypattern DP₃ is obtained. Next, the third dummy pattern DP₃ is providedextensively to the greater part of the dummy region FA. For example,after the mesh is generated in the third pitch over the entire part ofthe semiconductor substrate 1, the mesh over the placement prohibitingregion of the first dummy pattern DP₁, second dummy pattern DP₂ andthird dummy pattern DP₃ is removed. Thereafter, the third dummy patternDP₃ is placed to the mesh. Here, the third pitch has one side in thepattern size (Laa+Sa) obtained by adding the space size Sa to the sizeLaa of a longer side of the third dummy pattern DP₃ and also has theother side in the pattern size (La+Sa) obtained by adding the space sizeSa to the size La of the shorter side of the third dummy pattern DP₃.

Next, the placement prohibiting region of the first dummy pattern DP₁ isobtained. The placement prohibiting region of the first dummy patternDP₁ is obtained by adding the region where the third dummy patterns DP₃are extensively provided to the placement prohibiting region of thefirst dummy pattern DP₁, second dummy pattern DP₂ and third dummypattern DP₃. Next, the first dummy pattern DP₁ is provided extensivelyover the entire part of the dummy region FA. For example, after the meshis generated in the first pitch over the entire part of thesemiconductor substrate 1, the mesh over the placement prohibitingregion of the first dummy pattern DP₁ is removed. Thereafter, the firstdummy pattern DP₁ is placed in the mesh. Here, the first pitch isidentical to the pattern size (La+Sa) obtained by adding the space sizeSa to the size La of a side of the first dummy pattern DP₁.

Next, the placement prohibiting region of the second dummy pattern DP₂is obtained. The placement prohibiting region of the second dummypattern DP₂ is defined by adding the region where the first dummypattern DP₁ and third dummy pattern DP₃ are provided extensively to theplacement prohibiting region of the first dummy pattern DP₁, seconddummy pattern DP₂ and third dummy pattern DP₃. Next, the second dummypatterns DP₂ are provided extensively. For example, after the mesh isgenerated at the second pitch over the entire part of the semiconductorsubstrate 1, the mesh over the placement prohibiting region of thesecond dummy pattern DP₂ is removed. Thereafter, the second dummypatterns DP₂ are placed in the mesh. Here, the second pitch is identicalto the pattern size (Lb+Sa) obtained by adding the space size Sa to thesize Lb of a side of the second dummy pattern DP₂.

As explained above, according to the embodiment 1, the dummy pattern iscapable of selecting the desired shape without relation to the size ofthe area thereof, and it is also possible to combine three kinds or moreof dummy patterns. Therefore, the degree of freedom for placement ofdummy patterns can be increased, and the flatness at the surface of thesilicon oxide film 3 embedded into the isolation grooves 2, 2 a can alsobe improved. Moreover, an increase of mask data can be controlled byincreasing the number of placements of the dummy patterns DP₃ ofrelatively large area.

Embodiment 5

An example of the placement of dummy pattern of wiring will be explainedwith reference to FIG. 25 to FIG. 27 as an embodiment 5. FIG. 25 is aplan view of a portion of the dummy pattern of wiring. FIGS. 26(a) and26(b) are diagrams illustrating a pitch and a size of the dummy patternsof wiring. FIG. 27 is a cross-sectional view showing an example of alogic integrated circuit device using a dummy pattern of wiring.

A dummy wiring system is one of the methods for overcoming disadvantagesresulting from a level difference at the surface in the wiring process.This system is a method for extensively providing dummy patterns(conductive islands) consisting of the same material as that of theother wirings. This method is very effective for flattening theinsulation film covering the wirings, and, moreover, for alleviation ofa level difference at the surface. The embodiment 5 in which the presentinvention is adapted to this dummy wiring system will be explainedhereunder.

As shown in FIG. 25, the area inside of the boundaries BL, which areindicated by broken lines is the element forming region DA, wherewirings ML are formed, and the areas outside of the boundaries BL aredummy regions FA, where wirings ML are not formed.

In the dummy region FA, a plurality of first dummy wirings DML₁ ofrelatively wider area consisting of the same conductive layer as thewiring ML and a plurality of second dummy wirings DML₂ of relativelysmaller area are placed regularly.

As shown in FIG. 26(a) and FIG. 26(b), the first dummy wiring DML₁,occupying a relatively wider region of the dummy region FA, is formed ofa rectangular conductive island (indicated as relatively thinnerstippled region in FIG. 25) having a size Lca of the longer side and asize Lc of the shorter side, and the second dummy wiring DML₂ is formedof a square conductive island (indicated as relatively thicker hatchedregion in FIG. 25) having a size Ld in a side in both row and columndirections.

Moreover, the row-to-row space size among the adjacent first dummywiring DML₁ and the row-to-row space size among the adjacent seconddummy wiring DML₂ are set to the identical space size Sc, while thecolumn-to-column space size among the adjacent first dummy wiring DML₁and the column-to-column space size among the adjacent second dummywiring DML₂ are set to the identical space size Sd. The widths Lca, Lcof the first dummy wiring DML₁ and the width Ld of the second dummywiring DML₂ are set to the minimum line width or larger as required forthe lithography technique and dry-etching technique, and the spaces Sc,Sd are set to the minimum space width or larger as required for thelithography technique and dry-etching technique.

Here, the pattern size identical to the size Lca of the longer side ofthe first dummy wiring DML₁+space size Sc is an integer times thepattern size identical to the size Ld of a side of the second dummywiring DML₂+space size Sc and satisfies the relationship ofLca+Sc=N(Ld+Sc) (N is integer 1 or larger (N 1)). In the same manner,the pattern size identical to the size the Lc of shorter side of thefirst dummy wiring DML₁+space size Sd is an integer times the patternsize identical to the size Lc of the shorter side of the first dummywiring DML₁+space size Sd and satisfies the relationship ofLc+Sd=N(Ld+Sd) (N is integer 1 or larger (N 1)).

FIG. 27 is a cross-sectional view of a portion of the semiconductorsubstrate showing an example of a logic integrated circuit device towhich the dummy wiring system of the embodiment 5 is adapted.

For example, an interlayer insulation film 10 is formed to cover theCMOSFETs C₁, C₂, C₃ shown in FIG. 2 of the embodiment 1, and the firstlayer wiring 17 is formed on the interlayer insulation film 10. Thesurface of the interlayer insulation film 10 is flattened using the CMPmethod or etch-back method. Moreover, the first layer wiring 17 iscovered with the interlayer insulation film 23. The surface of theinterlayer insulation film 23 is flattened using the etch-back method orthe like.

At the upper layer of the interlayer insulation film 23, the secondlayer wiring 24 and a dummy wiring 25 are formed. Here, as the dummywiring 25, for example, the first dummy wiring DML₁ and second dummywiring DML₂ are used. The second layer wiring 24 and dummy wiring 25 arecomposed of the same material and are formed in the same process. As amaterial thereof, for example, a metal material, such as aluminum (Al)or copper (Cu), may be used.

The second layer wiring 24 and dummy wiring 25 are covered with theinterlayer insulation film 26. The interlayer insulation film 26 is, forexample, a silicon oxide film, SOG (Spin On Glass) and lamination layerfilm consisting of a silicon oxide film, and the silicon oxide filmdescribed above may be a TEOS oxide film that is deposited using theplasma CVD method with TEOS (Tetra Ethyl Ortho Silicate: Si(OC₂H₅)₄) andozone (O₃) as the source gas. The surface of the interlayer insulationfilm 26 is polished using the CMP method, and this surface is alsoflattened by utilizing the dummy wiring 25 (first dummy wiring DML₁,second dummy wiring DML₂).

Moreover, the third layer wiring 27 is also formed as the upper layer ofthe interlayer insulation film 26 to form, although not shown in thefigure, a passivation film as the upper-most insulation film.

Here, in this embodiment 5, the dummy wiring 25 is laid in the processto form the second layer wiring 24, but the dummy wiring may also beprovided in the process to form the first layer wiring 17 or the thirdlayer wiring 27. Moreover, even when the upper layer wiring is laid onthe third layer wiring 27, the dummy wiring can also be provided in theprocess to form these wirings.

As explained above, according to the embodiment 5, since the dummywiring 25 can be placed over the entire region of the dummy region FA byutilizing the first dummy wiring DML₁ of relatively large area and thesecond dummy wiring DML₂ of relatively small area, the flatness of thesurface of the interlayer insulation film 26 formed as the upper layerof the second layer wiring 24 can be improved. Moreover, since the firstdummy wiring DML₁ of relatively large area occupies a relatively widerregion of the dummy region FA, the number of placements of the seconddummy wiring DML₂ of relatively small area can be relatively reduced,and, thereby, an increase in the mask data amount can be controlled.

The preferred embodiments of the present invention have been explainedabove, but the present invention is not restricted to these embodiments,and so various changes and modifications are possible within the scopeof the claims thereof.

For example, in above embodiments, square and rectangular shapes areselected as the shapes of a dummy pattern, but the shape of a dummypattern is not restricted thereto, and a triangular shape, trapezoidalshape, circular shape or other polygonal shape may also be selected forthe dummy pattern.

The effects of the typical aspects and features of the present inventionwill be briefly explained as follows.

According to the present invention, the flatness of a member surfaceembedded to a plurality of recesses can be improved by placing at leasttwo dummy pattern groups therein.

Moreover, since a dummy pattern of relatively large area occupies arelative wider area of the dummy region, an increase in the timerequired for generation of a mask can be controlled by suppressing anincrease in the coordinate data amount required for generation of amask. Accordingly, the flatness of a member surface embedded in aplurality of recesses can be improved without increasing the timerequired for manufacturing the semiconductor device.

What is claimed is:
 1. A semiconductor device comprising: grooves formedin a semiconductor substrate such that the grooves define an activeregion and a plurality of first dummy regions; element isolationinsulating films filled in the grooves; a MISFET formed in the activeregion; a first interlayer insulation film formed over the MISFET, theactive region and the first dummy regions; a first wiring, a pluralityof first dummy wirings and a plurality of second dummy wirings formedover the first interlayer insulation film, respectively; and a secondinterlayer insulation film formed over the first wiring, the first dummywirings and the second dummy wirings, wherein the first dummy regions donot include the MISFET, wherein the first wiring is electricallyconnected with the MISFET, wherein the first dummy wirings and thesecond dummy wirings are not electrically connected with the MISFET,wherein each of the first dummy regions is arranged with a same pitch,wherein a planar size of each of the first dummy wirings is larger thana planar size of each of the second dummy wirings, wherein each of thefirst dummy wirings is arranged with a same pitch, wherein each of thesecond dummy wirings is arranged with a same pitch, wherein the seconddummy wirings are arranged next to the first wiring, and between thefirst wiring and the first dummy wirings, wherein the pitch of the firstdummy wirings is larger than the pitch of the second dummy wirings,wherein, in planar view, the first and second dummy wirings are arrangedover the first dummy regions, and wherein the first wiring, the firstdummy wirings and the second dummy wirings are comprised of copper as amajor component.
 2. The semiconductor device according to claim 1,wherein a gate electrode of the MISFET includes a first silicon film anda second silicon film formed over the first silicon film, and whereineach of the grooves is formed by using the first silicon film as a mask.